2" dia. InGaAs EPI Film on InP (SI) (100) Depositied by MOCVD ( InP:Fe) 2" dia x0.35mm,2sp,Film:750 nm

2" dia. InGaAs EPI Film on InP (SI) (100) Depositied by MOCVD ( InP:Fe) 2" dia x0.35mm,2sp,Film:750 nm2" dia. wafer InGaAs EPI on InP (Semi insulating)(100) by MOCVD deposition Substrate: InP Orientation: (100) Doped with Fe, Semi Insulating Wafer size: 2" diameter x 0. 35 mm Both sides polished EPI Film : Lattice matched In Ga alloy layer of N type InGaAs(undoped) Film Thickness : 0. 75 um (+ 20%) Roughness of epi layer is close to 1 mono layer (ML) One the back side we can expect some deposits and we can't guarantee the same quality (roughness) as

x Height) Case: 26mm(OD) x 25

You may add a die weight plat via double side tape on the top the applicator to make it stable

Weight     8

2 mm W) Max

optoelectronics and other microelectronics devices

Dimension     350mm L x 550mm W x 600mm H Net Weight of Machine 55 Kg (121 lbs) Shipping Dimensions 39"(L) x 31"(W) x 35"(H) Shipping Weight 185 lbs Press Dies optional Pressing dies with various diameters are available upon request at extra cost

Application

%) in an ultrasound bath for 5 min in order to remove the surface oxide layer

Specifications: TYPE:                                      NH20-48*46-22

Please use quartz or alumina crucible to carry sample

800ºC and Max

which makes it easy to repair and replace