SKU:6868648229

4" N-type Ge epi-film on N-type Silicon Wafer, 0.5 um thickness - FmGeNtypeonSiNtypea101D05C1US

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Regular price $646.88 USD
Regular price $676.88 USD Sale price $646.88 USD
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Ships within 48 hours · Estimated delivery Jul 14 - Jul 19

Description

4" N-type Ge epi-film on N-type Silicon Wafer, 0.5 um thickness - FmGeNtypeonSiNtypea101D05C1USSpecifications: Silicon Wafer Type: N P doped Orientation: (100) Size: 4'' dia Thickness: 500 550 um Grade: Prime Flates: 2 SEMI STD on Axis 0 degree off Resistivity: 1 10 ohm. cm Backside: Etch Particles: < 50 @ >0. 20 um TDD: <1E8 cm^2 Film: Ge epi film Thickness: 0. 5 um + 3% Orientation: (100) Type: N type Dopant concentration: ~5E18 cc Current RMS spec: Ra < 2 nm Related Products Thin Films A Z Crystal wafer A Z Plasma Cleaner Wafer Containers

ID:      16 mm

Material: Stainless Steel Felt Sheet

Input Voltage:   0 - 35 VAC 50/50Hz single phase

True density:   3

Tungsten coil heater and alumina crucible for high-temperature evaporation up to 1300 ºC

Digital display Digital display the speed in RPM/Hz

Optional Quick disconnect flange with KF50 vacuum port can be easily adapted to magnetic fluid seal

Package:              sold in 20 pcs per box

Centrifugal acceleration: 37 g

optoelectronics and other microelectronics devices

Note: These empty cylindrical cells are pre-clamped with the cap only and WITHOUT Cathode and Anode

Pumping of dust

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Exchange/Return Notes
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  • Final sale items are not eligible for returns or exchanges.
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