Ge Substrate: (100) 5x5 x 0.5 mm , 1SP, P type Ga doped,R:0.0007-0.005 ohm.cm

Ge Substrate: (100) 5x5 x 0.5 mm , 1SP, P type Ga doped,R:0.0007-0.005 ohm.cmGe Wafer Specification Growing Method: CZ Wafer Size: 5 x 5 x0. 5 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Ga doped Conductor type: P type Resistivity: 0. 0007 0. 005 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other

and vacuum Flanges

Material Feed Size

It is an ideal heating Accessorie for Furnace for material R&D laboratories

One end is 1/4" BSPP male fitting

of the bottom can: 22mm

EQ-Die-28D-B is a Complete pressing die with I

Kapton windows (10mm dia

Small particles may slip into the gap of the die parts and damages the sleeve during the compression

Application It excellent for developing new rechargeable battery and battery electrodes

8 split coin cells can be assembled independently with varying battery materials and tested parallelly by a multi-channel battery analyzer for comparison and time-saving

Structure & Features

1/8" BSPP connectors for up and down ports