Ge Substrate: (100) 5x5 x 0.5 mm , 1SP, N type Sb doped,R>40 Ohm.cm

Ge Substrate: (100) 5x5 x 0.5 mm , 1SP, N type Sb doped,R>40 Ohm.cmGe Wafer Specification Growing Method: CZ Wafer Size: 5x5 x0. 5 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Sb doped Conductor type: N type Resistivity: >40 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A

8%) for l = 633 nm

2 mm depth  cavity

Doping:                             undoped

Item Description Qty 1 Battery analyzer 1 pc 2 Middle Machine 1 pc 3 Brand new laptop with MS Window 10 system and battery analyzer operation software installed 1 pc 4 Test-Control software pre-installed on the laptop 1 pc 5 Alligator Clips for connecting pouch cell battery 8 pcs

Color:              dark brown

AC 110V or 220V with Filter installed on the pump

Dimension     350mm L x 550mm W x 600mm H Net Weight of Machine 55 Kg (121 lbs) Shipping Dimensions 39"(L) x 31"(W) x 35"(H) Shipping Weight 185 lbs Press Dies optional Pressing dies with various diameters are available upon request at extra cost

Orientation:                   (111)B +/-2 degree

Fixed Carbon (%)

Vickers hardness: (HV) 570kg/mm2)

Bulk density:   ~0

Warranty One-year limited warranty with lifetime support (rusted and damaged parts due to improper storage condition or maintenance are not covered by warranty)