SKU:30197799786
2" dia. InGaAs Film on InP (SI) (100) Deposited by MOCVD, 2" dia x0.35mm,2sp,Film:500 nm
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Ships within 48 hours · Estimated delivery Jul 16 - Jul 21
Description
2" dia. InGaAs Film on InP (SI) (100) Deposited by MOCVD, 2" dia x0.35mm,2sp,Film:500 nm2" dia. wafer InGaAs film on InP (Semi insulating)(100) by MOCVD deposition Substrate: InP Orientation: (100) Doped with Fe, Semi Insulating Wafer size: 2" diameter x 0. 35 mm Resistivity:>1x10^7 ohm. cm Both sides polished EPI Film : N type InGaAs(Si doped), (100) Nc>2x10^18 cc Film Thickness : 0. 5 um (+ 20%) Roughness of epi layer is close to 1 mono layer (ML) One the back side we can expect some deposits and we can't guarantee the same quality
Purity: 99 %
This series provides a safe and convenient packing and delivery solution for bare die
and report immediately to the carrier/MTI
Temperature control console provides up to 30 segments programmable with +/- 1 ºC accuracy
Surface Resistivity (ohms/sq
200&450 Mesh to separate the 32~75 microns particles from the powder clumps
Specifications Digital Micrometer Head 1" Travel
Basic Material: Metal
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08mm (80um)
Array (Capacity): 8*13 Package: sold in 20 pcs per box
Fill in expansion joints and masonry cracks inside of furnaces
Quick Dispatch:
Your 2" dia. InGaAs Film on InP (SI) (100) Deposited by MOCVD, 2" dia x0.35mm,2sp,Film:500 nm orders ship within 1-2 business days.
Delivery Options:
- Standard: 3-7 business days
- Fast: 2-3 business days
- Express: 1-2 business days
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Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
- Final sale items are not eligible for returns or exchanges.
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