SKU:28163987340
GaN -Single Crystal Substrate (0001), N type, 10x10.5x0.27 mm , 1SP
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
GaN -Single Crystal Substrate (0001), N type, 10x10.5x0.27 mm , 1SPGaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self supporting wafer thicknesses in a convenient time period. Specifications of Substrate Orientation: c axis (0001) + 1. 0 o Nominal Thickness 270+ 30 microns Dimension: 10 mm x 10. 5 mm + 0. 5 mm Resistivity
No warranty provided
DIY example
which is depended on the material to be mixed
Insulation ring: PP
Mobility: 3380-3970 cm^2/V
28mm in Nickel Tab with Adhesive Polymer Tape (9
Cleaning : Hand Wipe
FOR 10 mm barb hose to Rubber hose
or substrate with regular ( 5x5
Mcdanel strongly recommends keeping ramp rate less than 100oC/ hour at 400 - 1700 oC range
Outlet connections are G1/4 suitable for most MTI Flange
Put the tape and the sample on the very middle of the vacuum chuck
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