SKU:25180623791

BiFeO3 Target > 99.99%, 3" Dia x 0.125" Thick bond to Copper(Cu) backing plate(0.111" thick)

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Regular price $744.62 USD
Regular price $776.62 USD Sale price $744.62 USD
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  • USA
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Ships within 48 hours · Estimated delivery Jul 17 - Jul 22

Description

BiFeO3 Target > 99.99%, 3" Dia x 0.125" Thick bond to Copper(Cu) backing plate(0.111" thick)Composition: Bismuth Iron Oxide BiFeO3 Target 3" Dia x 0. 125" Thick bond to Copper(Cu) backing plate(0. 111" thick) Purity: > 99. 99% Related Products Target A Z Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

Other Sapphire

BN film is  amorphous t     Its hardness is inferior only to diamond

025 mm ( thickness)

Once replace portend of fitting of EQ-FL-## by EQ-Fit-14-14P for 1/4” tube

Orientation: (100)

The pressing die cannot be used for pressing powder with the particle size < 30 microns

Options Optional safety protection: Positive Temperature Coefficient (PTC) Thermistor is built into the cap by request

More than 29

The equipment can be used with 110V with a 1000W Transformer

4mm Wide Nickel Tabs for use as the Negative Terminal of Polymer Li-ion Batteries    50pcs/Box

YSZ Ceramic Substrate  ( Polycrystaline ceramic of 3

Length: 56mm

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Your BiFeO3 Target > 99.99%, 3" Dia x 0.125" Thick bond to Copper(Cu) backing plate(0.111" thick) orders ship within 1-2 business days.

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Exchange/Return Notes
  • We offer a 30-day return/exchange service after receiving.
  • Final sale items are not eligible for returns or exchanges.
  • To process your return/exchange, please contact us at [email protected]
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