SKU:19010143009
GaAs Wafer - Growing Method: VGF (100) Zn doped P-type, , 2"x0.5 mm, 1sp, (5.17-9.38) x 10^17 /cm^3
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
GaAs Wafer - Growing Method: VGF (100) Zn doped P-type, , 2"x0.5 mm, 1sp, (5.17-9.38) x 10^17 /cm^3GaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 2" dia x 0. 5mm Polishing: one side polished Doping: Zn doped Conductor type: S C P Carrier Concentration: (5. 17 9. 38) x 10^17 cm^3 Mobility: 1 168 188 cm^2 V. S EPD: <5000 cm^2 Resistivity: (3. 96 6. 67)x10^ 2 ohm. cm Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
Click the picture below to see the battery electrode coated by Automatic Film Coater with 12"W x 24"L Glass Bed and 250mm Adjustable Doctor Blade - MSK-AFA-II
For preparing Li-ion battery electrode material and conducting material
Note: The single grinding time is recommended not to exceed 300s
combination of grinding jar and milling ball
Features Two blades with adjustable height from 0 - 6 mm
Syringes are NOT included
Perfect for ferroelectric epitaxial thin film
Cap Tab Length: 15mm
Morphology: nearly spherical
low gas permeability and excellent aging characteristics
The sample holder and container are not included
Optional holder: 8-Channel coin cell testing board for measuring coin cells easily (click Pic 5 to order )
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