SKU:15556885768
Si Wafer (111), 5 " dia x 0.625mm, 1SP P-type ( B- doped), R:1-10 ohm-cm - SIBc125D0625C1R1US
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Ships within 48 hours · Estimated delivery Jul 29 - Aug 3
Description
Si Wafer (111), 5 " dia x 0.625mm, 1SP P-type ( B- doped), R:1-10 ohm-cm - SIBc125D0625C1R1USSingle crystal Si Conductivity: P type ( B doped) Size: 5" diameter x 0. 625 mm Orientation: (111) Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Polish: One side polished Surface roughness: < 5A Packing : Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing
Material Made by High-stretched Carbon Steel Hardness HRC 60-62 Roughness Average (Ra) 0
Orientation: C-axis[0001]( +-0
Our obligation is to list all construction materials in fluid contact
l: 515 nm 633 nm 800 nm
Secondary flat is 90 degree clockwise from the primary flat when viewing the polished face <+Z/-Y>
5 mm thickness +/-0
SrTiO3: made in Japan
high strength and density graphite
Quartz Tube Dimension:60 OD × 53
Output voltage and current can be set by using knobs on the front panel and read from the digital display
100 mm length
Load: 100 metric Ton (at room temperature)
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Exchange/Return Notes
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